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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD823 description collector current: i c = 6a collector-emitter breakdown voltage- : v (br)ceo = 90v(min.) applications designed for b/w tv horiz ontal output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 90 v v ebo emitter-base voltage 7 v i c collector current-continuous 6 a i cm collector current-peak 10 a p c total power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD823 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; i b = 0 b 90 v v (br)cbo collector-base breakdown voltage i c = 5ma; i e = 0 200 v v (br)ebo emitter-base breakdown voltage i e = 5ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 1.5 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.5a b 1.5 v i cbo collector cutoff current v cb = 40v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 4v; i c = 0 0.1 ma h fe dc current gain i c = 3a; v ce = 5v 20 f t current-gain?bandwidth product i c = 1a; v ce = 5v 15 mhz t f fall time i c = 5a; i b1 = 0.6a 1.0 s isc website www.iscsemi.cn 2 |
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